IGBT Trench Field Stop 650V 21A 47W Through Hole TO-220NFM
IGBT, 650V, 21A, 175DEG C, 47W; DC Collector Current:21A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:47W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220NFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors FIELD STOP TRENCH IGBT
IGBT TRNCH FLD 650V 21A TO220NFM
| DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT50TM65DGC9-ND | 10AH0567 | RGT50TM65DGC9 | RGT50TM65DGC9 |
| Product Name | Single IGBTs | Igbt, 650V, 21A, 175Deg C, 47W; Dc Collector Current Rohm | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |
