RGT50TM65D is a 650V Field Stop Trench IGBT with a built-in fast recovery diode, designed for general inverters, UPS, power conditioners, and welders. It is packaged in a TO-220NFM case and has a pulsed collector current rating of 75 A. The IGBT features a collector-emitter saturation voltage of 1.65 V at 25 A and a short circuit withstand time of 5 μs. It operates with a junction temperature range of -40°C to +175°C and meets RoHS compliance. Thermal resistance from junction to case is 3.19 °C/W for the IGBT and 4.47 °C/W for the diode.
RGT50TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT50TM65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT |
| PD | 47000 milliwatts |
