IGBT Trench Field Stop 650V 48A 194W Surface Mount LPDS
IGBT Trench Field Stop 650V 48A 194W Surface Mount LPDS
IGBT TRENCH FIELD 650V 48A LPDS Product overview: RGT50NS65DGTL from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 48A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 48A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGT50NS65DGTL can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1324501-RGT50NS65DGT
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,000
Mounting: Surface Mount
Power - Max: 194 W
Reverse Recovery Time (trr): 58 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 48 A
Current - Collector Pulsed (Icm): 75 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Input Type: Standard
Gate Charge: 49 nC
Td (on/off) @ 25°C: 27ns/88ns
Test Condition: 400V, 25A, 10Ohm, 15V
Supplier Device Package: LPDS
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: RGT50NS65DGTLTR,RGT5
Base Product Number: RGT50
RoHS Status: ROHS3 Compliant
IGBT TRENCH FIELD 650V 48A LPDS
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
IGBT, 650V, 48A, 175DEG C, 194W; DC Collector Current:48A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:194W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; RoHS Compliant: Yes
| DigiKey | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT50NS65DGTLCT-ND | RGT50NS65DGTLTR-ND | 279-RGT50NS65DGTL | 1324501-RGT50NS65DGTL | RGT50NS65DGTL | RGT50NS65DGTL | 10AH0566 |
| Product Name | Single IGBTs | Single IGBTs | 650V 48A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Igbt, 650V, 48A, 175Deg C, 194W; Dc Collector Current Rohm |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; SOT3; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3 | ||
| Packing Method | Cut Tape (CT) | Tape Reel | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
