IGBT Trench Field Stop 650V 48A 194W Through Hole TO-262
IGBT, 650V, 48A, 175DEG C, 194W; DC Collector Current:48A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:194W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRENCH FIELD 650V 48A TO262
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT50NS65DGC9-ND | 10AH0565 | RGT50NS65DGC9 | RGT50NS65DGC9 |
| Product Name | Single IGBTs | Igbt, 650V, 48A, 175Deg C, 194W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
