RGT50NL65D is a 650V, 25A Field Stop Trench IGBT with a built-in fast recovery diode, designed for general inverter, UPS, power conditioner, and welder applications. It is packaged in an LPDL (TO-263L) package and features a collector-emitter saturation voltage of 1.65V at 25°C, a short circuit withstand time of 5μs, and a maximum power dissipation of 194W at 25°C. The device operates with a junction temperature range of -40°C to +175°C and is RoHS compliant.
RGT50NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT50NL65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDL, Field Stop Trench IGBT |
| PD | 194000 milliwatts |
