IGBT Trench Field Stop 650V 17A 39W Through Hole TO-220NFM
IGBT TRNCH FLD 650V 17A TO220NFM
IGBT, 650V, 17A, 175DEG C, 39W; DC Collector Current:17A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:39W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220NFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors FIELD STOP TRENCH IGBT
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT40TM65DGC9-ND | RGT40TM65DGC9 | 10AH0563 | RGT40TM65DGC9 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, 650V, 17A, 175Deg C, 39W; Dc Collector Current Rohm | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
