The RGT40TM65D is a 650V, 20A Field Stop Trench IGBT with a built-in fast recovery diode, packaged in a TO-220NFM case. It has a collector-emitter saturation voltage of 1.65V at 20A and 25°C, and supports a short-circuit withstand time of 5μs. The device operates with a junction temperature range of -40°C to +175°C and complies with RoHS standards. Thermal resistance is 3.82°C/W for the IGBT junction-to-case and 4.47°C/W for the diode junction-to-case. Power dissipation is rated at 39W at 25°C and 19W at 100°C.
RGT40TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT40TM65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 20A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT |
| PD | 39000 milliwatts |
