IGBT Trench Field Stop 650V 40A 161W Through Hole TO-262
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
IGBT, 650V, 40A, 175DEG C, 161W; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRENCH FIELD 650V 40A TO262
| DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT40NS65DGC9-ND | RGT40NS65DGC9 | 10AH0562 | RGT40NS65DGC9 |
| Product Name | Single IGBTs | IGBT Transistors | Igbt, 650V, 40A, 175Deg C, 161W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |
