The RGT40NS65D is a 650V, 20A field-stop trench IGBT with a built-in fast and soft recovery FRD, designed for general inverter, UPS, power conditioner, and welder applications. It is packaged in a TO-262 (LPDS) format and rated for a maximum junction temperature of 175°C. The device has a collector-emitter saturation voltage of 1.65V at 25°C and a short-circuit withstand time of 5μs. It is RoHS compliant with Pb-free lead plating.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT40NS65D(LPDS) |
| Product Name | 5μs Short-Circuit Tolerance, 650V 20A, FRD Built-in, LPDS, Field Stop Trench IGBT |
| PD | 161000 milliwatts |
