ROHM Semiconductor GmbH 5μs Short-Circuit Tolerance, 650V 20A, FRD Built-in, LPDL, Field Stop Trench IGBT RGT40NL65D

RGT40NL65D is a 650V, 20A Field Stop Trench IGBT with a built-in fast recovery diode, housed in a TO-263L (LPDL) package. It features a collector-emitter saturation voltage of 1.65V at 25°C, a short-circuit withstand time of 5μs, and a maximum power dissipation of 161W at 25°C. The device operates with a junction temperature range of -40°C to +175°C and meets RoHS compliance. Thermal resistance from junction to case is 0.93°C/W for the IGBT and 2.12°C/W for the diode. The part is rated for continuous collector current of 20A at 100°C and supports pulsed currents up to 60A. It is designed for general inverter, UPS, power conditioner, and welder applications.