IGBT Trench Field Stop 650V 14A 32W Through Hole TO-220NFM
IGBT TRNCH FLD 650V 14A TO220NFM Product overview: RGT30TM65DGC9 from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 14A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 14A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGT30TM65DGC9 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1088326-RGT30TM65DGC
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Power - Max: 32 W
Reverse Recovery Time (trr): 55 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 14 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Gate Charge: 32 nC
Td (on/off) @ 25°C: 18ns/64ns
Test Condition: 400V, 15A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NFM
Temperature Range - Operating: -40°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: RGT30
IGBT, 650V, 14A, 175DEG C, 32W; DC Collector Current:14A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:32W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220NFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT Transistors FIELD STOP TRENCH IGBT
IGBT TRNCH FLD 650V 14A TO220NFM
IGBT, 650V, 14A, 175DEG C, 32W, DC COLLECTOR CURRENT:14A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):1.65V, POWER DISSIPATION PD:32W, COLLECTOR EMITTER VOLTAGE V(BR)CEO:650V, TRANSISTOR CASE STYLE:TO-220NFM, NO. OF PINS:3PINS, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | RGT30TM65DGC9-ND | 279-RGT30TM65DGC9 | 1088326-RGT30TM65DGC9 | 10AH0560 | RGT30TM65DGC9 | RGT30TM65DGC9 | 136778768 |
| Product Name | Single IGBTs | 650V 14A IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Single | Igbt, 650V, 14A, 175Deg C, 32W; Dc Collector Current Rohm | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs | Transistor |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||||
| Package Type | TO-220; TO-220-3 Full Pack | Tube | TO-220; SOT3 | TO-3; TO-220 | |||
| Packing Method | Tube | Tube | Tube; Tube |
