IGBT TRENCH FIELD 650V 30A LPDS Product overview: RGT30NS65DGTL from ROHM Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 30A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 30A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-RGT30NS65DGTL can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 141356-RGT30NS65DGTL
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 55ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 32nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: LPDS (TO-263S)
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 133W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 2.1V @ 15V, 15A
Turn-on and Turn-off delay time: 18ns/64ns
Testing Conditions: 400V, 15A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
IGBT, SINGLE, 650V, 30A, TO-263S-3, DC COLLECTOR CURRENT:30A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):1.65V, POWER DISSIPATION PD:133W, COLLECTOR EMITTER VOLTAGE V(BR)CEO:650V, TRANSISTOR CASE STYLE:TO-263S, NO. OF PINS:3PINS, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
IGBT TRENCH FIELD 650V 30A LPDS
IGBT, SINGLE, 650V, 30A, TO-263S-3; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:133W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263S; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT 650V 30A 133W TO-263S
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-RGT30NS65DGTL | 141356-RGT30NS65DGTL | 136777314 | RGT30NS65DGTL | 76Y4983 | 687-RGT30NS65DGTL |
| Product Name | 650V 30A IGBT Transistor | IGBTs - Single - RGT30NS65DGTL | Transistor | Discrete Semiconductor Products - Transistors - IGBTs | Igbt, Single, 650V, 30A, To-263S-3; Dc Collector Current Rohm | IGBT 650V 30A 133W TO-263S |
| PD | 133 milliwatts | 133000 milliwatts | 133000 milliwatts | 133000 milliwatts | ||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | |||
| Package Type | Tape & Reel (TR) | TO-263; SOT3; LPDS (TO-263S) | TO-3; TO-263 | |||
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | ||
| VCE(on) | 2.1 volts | 1.65 volts |
