RGT30NL65D is a 650V, 15A Field Stop Trench IGBT with a built-in fast recovery diode, designed for general inverter, UPS, power conditioner, and welder applications. It is packaged in an LPDL (TO-263L) case, with a power dissipation of 133W at 25°C and 66W at 100°C. The device has a collector-emitter saturation voltage of 1.65V (typical) at 25°C and 15A, and a short-circuit withstand time of 5µs. The operating junction temperature range is -40°C to +175°C, and it is RoHS compliant.
RGT30NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT30NL65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 15A, FRD Built-in, LPDL, Field Stop Trench IGBT |
| PD | 133000 milliwatts |
