RGT20TM65D is a 650V, 10A Field Stop Trench IGBT in a TO-220NFM package with a built-in fast recovery diode, designed for general inverters, UPS systems, power conditioners, and welders. It has a collector-emitter saturation voltage of 1.65V at 25°C, a short circuit withstand time of 5μs, and a maximum junction temperature of 175°C. The device is RoHS compliant and has a thermal resistance from junction to case of 5.84°C/W for the IGBT and 6.70°C/W for the diode.
RGT20TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT20TM65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 10A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT |
| PD | 25000 milliwatts |
