RGT16TM65D is a 650V, 8A Field Stop Trench IGBT with a built-in fast recovery diode, packaged in a TO-220NFM case. It has a collector-emitter saturation voltage of 1.65V at 8A and 25°C, and a short-circuit withstand time of 5μs. The device supports a maximum junction temperature of 175°C and a power dissipation of 22W at 25°C. Thermal resistance from junction to case is 6.53°C/W for the IGBT and 6.70°C/W for the diode. It is RoHS compliant and designed for applications such as general inverters, UPS, power conditioners, and welders.
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT16TM65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT |
| PD | 22000 milliwatts |
