ROHM Semiconductor GmbH 5μs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT RGT16TM65D

Description
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Datasheet
Description
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
Datasheet

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5μs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT - RGT16TM65D - ROHM Semiconductor GmbH
Willich, Germany
5μs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT
RGT16TM65D
5μs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT RGT16TM65D
RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGT16TM65D
Product Name 5μs Short-Circuit Tolerance, 650V 8A, FRD Built-in, TO-220NFM, Field Stop Trench IGBT
PD 22000 milliwatts
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