RGT16NL65D is a 650V, 8A Field Stop Trench IGBT with a built-in fast recovery diode, designed for general inverter, UPS, power conditioner, and welder applications. It is packaged in a LPDL (TO-263L) surface-mount case with a pulsed collector current rating of 24A and a short-circuit withstand time of 5μs. The collector-emitter saturation voltage is 1.65V at 25°C and 8A. Power dissipation is 94W at 25°C and 47W at 100°C. Operating junction temperature ranges from -40°C to +175°C, and the device is RoHS compliant.
RGT16NL65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGT16NL65D |
| Product Name | 5μs Short-Circuit Tolerance, 650V 8A, FRD Built-in, LPDL, Field Stop Trench IGBT |
| PD | 94000 milliwatts |
