RGSX5TS65E is a 650V, 75A field stop trench IGBT with a built-in fast recovery diode, designed for general inverters, UPS, power conditioners, and welders. It is packaged in a TO-247N case and rated for a maximum junction temperature of 175°C. The device has a collector-emitter saturation voltage of 1.70V (typical) at 25°C and a short-circuit withstand time of 8μs at 25°C and V_GE=15V. Thermal resistance from junction to case is 0.37°C/W for the IGBT and 0.57°C/W for the diode. It is RoHS compliant and features a pulse collector current rating of 225A. The IGBT supports reverse bias safe operating area (RBSOA) under inductive load conditions.
RGSX5TS65E is a 8μs SCSOA guaranteed IGBT, suitable for general unverter, UPS, Welder and power conditioner.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGSX5TS65E |
| Product Name | 8μs Short-Circuit Tolerance, 650V 75A, FRD Built-in, Field Stop Trench IGBT |
| PD | 404000 milliwatts |
