RGSX5TS65DHR is a 650V, 75A field stop trench IGBT with a built-in fast and soft recovery FRD, designed for general inverter applications in automotive and industrial systems. It is packaged in a TO-247N case and qualified to AEC-Q101. The device has a collector-emitter saturation voltage of 1.70 V (typical) at 25°C and can withstand a short circuit for 8 μs. Maximum power dissipation is 404 W at 25°C case temperature, with an operating junction temperature range of -40°C to +175°C. Thermal resistance from junction to case is 0.37 °C/W for the IGBT and 0.80 °C/W for the diode. The part is RoHS compliant with lead-free plating.
RGSX5TS65DHR is a 8μs SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGSX5TS65DHR |
| Product Name | 8μs Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT |
| PD | 404000 milliwatts |
