The RGS80TS65D is a 650V, 40A field stop trench IGBT with a built-in fast and soft recovery FRD, packaged in a TO-247N case. It has a collector-emitter saturation voltage of 1.65V (typical) at 25°C, a power dissipation of 272W at 25°C, and a short circuit withstand time of 8μs at 25°C and 6μs at 150°C. The device is qualified to AEC-Q101 and is RoHS compliant. Operating junction temperature ranges from -40°C to +175°C, with a thermal resistance from junction to case of 0.55°C/W for the IGBT and 1.17°C/W for the diode.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGS80TS65DHR |
| Product Name | 8μs Short-Circuit Tolerance, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 272000 milliwatts |
