IGBT Trench Field Stop 650V 56A 223W Through Hole TO-247N
IGBT, 650V, 56A, 175DEG C, 223W; DC Collector Current:56A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:223W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 650V 56A TO247N
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 846-RGS60TS65HRC11-ND | 99AC9519 | RGS60TS65HRC11 |
| Product Name | Single IGBTs | Igbt, 650V, 56A, 175Deg C, 223W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
