ROHM Semiconductor GmbH 8μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive RGS60TS65DHR

Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet
Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet

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8μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive - RGS60TS65DHR - ROHM Semiconductor GmbH
Willich, Germany
8μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive
RGS60TS65DHR
8μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive RGS60TS65DHR
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGS60TS65DHR
Product Name 8μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive
PD 223000 milliwatts
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