The RGS60TS65D is a 650V, 30A field stop trench IGBT with a built-in fast and soft recovery freewheeling diode, housed in a TO-247N package. It features a collector-emitter saturation voltage of 1.65V (typical) at 25°C, a power dissipation of 223W at 25°C, and a short circuit withstand time of 8μs at 25°C. The device is qualified to AEC-Q101 and is RoHS compliant, designed for automotive and industrial inverter applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGS60TS65DHR |
| Product Name | 8μs Short-Circuit Tolerance, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| PD | 223000 milliwatts |
