RGS50TSX2DHR is a 1200V, 25A field stop trench IGBT with a built-in fast recovery diode, designed for general inverter applications in automotive and industrial systems. It is packaged in a TO-247N case and rated for a junction temperature range of -40°C to +175°C. The device features a collector-emitter saturation voltage of 1.70V (typical) at 25°C and a short-circuit withstand time of 10μs at 25°C junction temperature. It meets AEC-Q101 qualifications and is RoHS compliant.
RGS50TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGS50TSX2DHR |
| Product Name | 10μs Short-Circuit Tolerance, 1200V 25A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive |
| TJ | -55 to 175 C (-67 to 347 F) |
