The RGS30TSX2D is a 1200V, 15A field stop trench IGBT with a built-in fast and soft recovery FRD, designed for general inverter, UPS, PV inverter, and power conditioner applications. It is packaged in a TO-247N case and rated for a maximum junction temperature of 175°C. The device has a collector-emitter saturation voltage of 1.70V at 25°C and 2.20V at 175°C, and supports a short-circuit withstand time of 10μs at 25°C. Thermal resistance from junction to case is 0.56°C/W for the IGBT and 1.10°C/W for the diode. The part is RoHS compliant and features a gate-emitter voltage rating of ±30V.
The RGS30TSX2D is a 10μs SCSOA guaranteed IGBT, suitable for General Inverter, UPS, PV Inverter and Power Conditioner. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGS30TSX2D |
| Product Name | 10μs Short-Circuit Tolerance, 1200V 15A, FRD Built-in, Field Stop Trench IGBT |
| PD | 267000 milliwatts |
