IGBT Trench Field Stop 650V 88A 326W Through Hole TO-247N
IGBT Transistors 650V 50A FIELD STOP TRENCH IGB
IGBT, 650V, 88A, 175DEG C, 326W; DC Collector Current:88A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 650V 88A TO247N
| DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 846-RGS00TS65HRC11-ND | RGS00TS65HRC11 | 02AH2251 | RGS00TS65HRC11 |
| Product Name | Single IGBTs | IGBT Transistors | Igbt, 650V, 88A, 175Deg C, 326W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |
