ROHM Semiconductor GmbH 8μs Short-Circuit Tolerance, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive RGS00TS65EHR

RGS00TS65EHR is a 650V, 50A field stop trench IGBT with a built-in fast and soft recovery FRD, designed for automotive and industrial inverter applications. It is packaged in a TO-247N case and qualified to AEC-Q101. The device has a collector-emitter saturation voltage of 1.65V at 25°C and supports a short-circuit withstand time of 8μs at 25°C junction temperature. Continuous collector current is rated at 50A at 100°C, with a maximum power dissipation of 326W at 25°C. The junction operating temperature ranges from -40°C to +175°C, and the package is RoHS compliant with lead-free plating.