ROHM Semiconductor GmbH 430V 20A, TO-252, Ignition IGBT for Automotive RGPR10BM40FH

Description
RGPR10BM40 is high reliability product which achieved both low Vce(sat) and high avalanche energy.
Description
RGPR10BM40 is high reliability product which achieved both low Vce(sat) and high avalanche energy.
Datasheet
Datasheet Summary
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RGPR10BM40FH is a 430V, 20A ignition IGBT in a TO-252 package, designed for automotive ignition coil and solenoid driver circuits. It features a collector-emitter saturation voltage of 1.6V at 10A and 25°C, a single-pulse avalanche energy of 250mJ at 25°C, and built-in gate-emitter protection diode and resistance. The device is qualified to AEC-Q101 and is RoHS compliant. Thermal resistance junction-to-case is 1.40°C/W, and it operates with a junction temperature range of -40°C to +175°C.

Datasheet Summary
Powered by GS/AI

RGPR10BM40FH is a 430V, 20A ignition IGBT in a TO-252 package, designed for automotive ignition coil and solenoid driver circuits. It features a collector-emitter saturation voltage of 1.6V at 10A and 25°C, a single-pulse avalanche energy of 250mJ at 25°C, and built-in gate-emitter protection diode and resistance. The device is qualified to AEC-Q101 and is RoHS compliant. Thermal resistance junction-to-case is 1.40°C/W, and it operates with a junction temperature range of -40°C to +175°C.

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430V 20A, TO-252, Ignition IGBT for Automotive - RGPR10BM40FH - ROHM Semiconductor GmbH
Willich, Germany
430V 20A, TO-252, Ignition IGBT for Automotive
RGPR10BM40FH
430V 20A, TO-252, Ignition IGBT for Automotive RGPR10BM40FH
RGPR10BM40 is high reliability product which achieved both low Vce(sat) and high avalanche energy.

RGPR10BM40 is high reliability product which achieved both low Vce(sat) and high avalanche energy.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number RGPR10BM40FH
Product Name 430V 20A, TO-252, Ignition IGBT for Automotive
PD 107000 milliwatts
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