Low VCE(sat) Type, 600V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGCL80TS60D
The RGCL80TS60D is a 600V, 40A field stop trench IGBT with a built-in fast recovery diode, packaged in a TO-247GE case. It has a collector-emitter saturation voltage of 1.4V at 25°C and a maximum power dissipation of 148W at 25°C. The operating junction temperature ranges from -40°C to +175°C, with a storage temperature range of -55°C to +175°C. The device is RoHS compliant and features low switching losses and soft switching characteristics. Thermal resistance from junction to case is 1.01°C/W for the IGBT and 2.28°C/W for the diode. Gate-emitter threshold voltage is 4.5V to 6.5V, and the reverse bias safe operating area supports full square pulses at 600V and 175°C junction temperature.
Low VCE(sat) Type, 600V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGCL80TS60DROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGCL80TS60D | RGCL80TS60D |
| Product Name | Low VCE(sat) Type, 600V 40A, FRD Built-in, TO-247GE, Field Stop Trench IGBT |
600V 40A Field Stop Trench IGBT |
| PD | 148000 milliwatts | 148000 milliwatts |
