IGBT Trench Field Stop 600V 35A 57W Through Hole TO-3PFM
IGBT, 600V, 35A, 175DEG C, 57W; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.4V; Power Dissipation Pd:57W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 600V 35A TO3PFM
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGCL80TK60DGC11-ND | 10AH0539 | RGCL80TK60DGC11 | RGCL80TK60DGC11 |
| Product Name | Single IGBTs | Igbt, 600V, 35A, 175Deg C, 57W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) |
