Low VCE(sat) Type, 600V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
RGCL80TK60D
The RGCL80TK60D is a 600 V, 21 A (at 100°C) trench field stop IGBT with a built-in fast recovery diode, packaged in a TO-3PFM case. It features a collector-emitter saturation voltage of 1.4 V at 40 A and 25°C, and a maximum power dissipation of 57 W at 25°C. Junction temperature ranges from -40°C to +175°C. The device is RoHS compliant and offers soft switching characteristics with minimal switching losses, suitable for partial switching PFC and brake inverter applications.
Low VCE(sat) Type, 600V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
RGCL80TK60DROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGCL80TK60D | RGCL80TK60D |
| Product Name | Low VCE(sat) Type, 600V 40A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
600V 40A Field Stop Trench IGBT |
| PD | 57000 milliwatts | 57000 milliwatts |
