Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGCL60TS60D
The RGCL60TS60D is a 600V, 30A Field Stop Trench IGBT with a built-in fast and soft recovery FRD, packaged in a TO-247GE case. It features a collector-emitter saturation voltage of 1.4V at 25°C and a peak collector current rating of 30A at 100°C. The device supports a maximum junction temperature of 175°C and has a power dissipation of 111W at 25°C, reducing to 55W at 100°C. Thermal resistance is 1.34°C/W for the IGBT junction-to-case and 2.28°C/W for the diode. The part is RoHS compliant and meets standard industrial application requirements for PFC, discharge circuits, and inverter brake systems.
Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT
RGCL60TS60DROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGCL60TS60D | RGCL60TS60D |
| Product Name | Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-247GE, Field Stop Trench IGBT |
600V 30A Field Stop Trench IGBT |
| PD | 111000 milliwatts | 111000 milliwatts |
