IGBT Trench Field Stop 600V 30A 54W Through Hole TO-3PFM
IGBT, 600V, 30A, 175DEG C, 54W; DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.4V; Power Dissipation Pd:54W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3PFM; No. of Pins:3Pins; RoHS Compliant: Yes
IGBT TRNCH FIELD 600V 30A TO3PFM
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
| DigiKey | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGCL60TK60DGC11-ND | 687-RGCL60TK60DGC11 | 10AH0535 | RGCL60TK60DGC11 | RGCL60TK60DGC11 |
| Product Name | Single IGBTs | IGBT | Igbt, 600V, 30A, 175Deg C, 54W; Dc Collector Current Rohm | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||
| Package Type | TO-3; TO-3PFM, SC-93-3 | TO-3 | |||
| Packing Method | Tube | Tube; Tube | |||
| Structure | Trench Field Stop |
