Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
RGCL60TK60D
The RGCL60TK60D is a 600 V, 18 A continuous collector current field stop trench IGBT with a built-in fast and soft recovery FRD, packaged in a TO-3PFM case for use in partial switching PFC, discharge circuits, and inverter brake applications. It has a collector-emitter saturation voltage of 1.4 V at 30 A and 25 °C, and a maximum power dissipation of 54 W at 25 °C. The device operates with a junction temperature range of -40 °C to +175 °C and is RoHS compliant. The package is supplied in a tube, with an ordering unit of 450 pieces.
Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT
RGCL60TK60DROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | RGCL60TK60D | RGCL60TK60D |
| Product Name | Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT |
600V 30A Field Stop Trench IGBT |
| PD | 54000 milliwatts | 54000 milliwatts |
