ROHM Semiconductor GmbH

Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

RGCL60TK60D

Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet
Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
<p>Low V<sub>CE(sat)</sub> Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT</p> - RGCL60TK60D - ROHM Semiconductor GmbH
Willich, Germany

Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT


RGCL60TK60D

Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

RGCL60TK60D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet
600V 30A Field Stop Trench IGBT - RGCL60TK60D - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
600V 30A Field Stop Trench IGBT
RGCL60TK60D
600V 30A Field Stop Trench IGBT RGCL60TK60D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RGCL60TK60D RGCL60TK60D
Product Name

Low VCE(sat) Type, 600V 30A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

600V 30A Field Stop Trench IGBT
PD 54000 milliwatts 54000 milliwatts
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