ROHM Semiconductor GmbH 600V 10A, TO-252, Single Super Fast Recovery Diode RFNL10BGE6S

Description
RFNL10BGE6S is the silicon epitaxial planar type Fast Recovery Diode with ultra low forward voltage and low switching loss, suitable for general rectification or PFC (DCM : Discontinuous Current Mode).
Datasheet
Description
RFNL10BGE6S is the silicon epitaxial planar type Fast Recovery Diode with ultra low forward voltage and low switching loss, suitable for general rectification or PFC (DCM : Discontinuous Current Mode).
Datasheet

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600V 10A, TO-252, Single Super Fast Recovery Diode - RFNL10BGE6S - ROHM Semiconductor GmbH
Willich, Germany
600V 10A, TO-252, Single Super Fast Recovery Diode
RFNL10BGE6S
600V 10A, TO-252, Single Super Fast Recovery Diode RFNL10BGE6S
RFNL10BGE6S is the silicon epitaxial planar type Fast Recovery Diode with ultra low forward voltage and low switching loss, suitable for general rectification or PFC (DCM : Discontinuous Current Mode).

RFNL10BGE6S is the silicon epitaxial planar type Fast Recovery Diode with ultra low forward voltage and low switching loss, suitable for general rectification or PFC (DCM : Discontinuous Current Mode).

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Step Recovery Diodes
Product Number RFNL10BGE6S
Product Name 600V 10A, TO-252, Single Super Fast Recovery Diode
Configuration Single
RoHS Compliant RoHS
Package TO-252GE_Diode
Pin Count 3
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