The RFN20TB4S is a fast recovery diode from ROHM Semiconductor, designed for general rectification applications. It features low switching loss and high current overload capacity, making it suitable for efficient power supply designs. The diode has a maximum repetitive peak reverse voltage of 430V and can handle an average rectified forward current of 20A at a case temperature of 49¬8C. It also supports a forward current surge peak of up to 100A. The junction temperature can reach up to 150¬8C, and the storage temperature range is from -55¬8C to 150¬8C. The thermal resistance from junction to case is specified at 2.5¬8C/W. The diode's reverse recovery time is characterized at 21.7ns, which contributes to its fast switching capabilities. Overall, the RFN20TB4S is a robust option for applications requiring reliable performance under high voltage and current conditions.
ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
| ROHM Semiconductor USA, LLC | |
|---|---|
| Product Category | Diodes |
| Product Number | RFN20TB4S |
| Product Name | Fast Recovery Diode |
| RoHS Compliant | RoHS |
