ROHM Semiconductor GmbH Super Fast Recovery Diode RFN10BM6S

RFN10BM6S is a silicon epitaxial planar type fast recovery diode designed for general rectification applications. It features low switching loss and high current overload capacity, making it suitable for demanding electrical environments. The diode has an average rectified forward current rating of 10 A and a repetitive peak reverse voltage of 600 V. Its forward voltage ranges from 1.25 V to 1.55 V, with a reverse recovery time of 30 to 50 ns. The operating junction temperature can reach up to 150¬8C, and it has a thermal resistance of 6.0¬8C/W from junction to case. This diode is packaged in a TO-252 form factor, which is compatible with various mounting configurations.