ROHM Semiconductor GmbH Super Fast Recovery Diode RF601BM2D

RF601BM2D is a silicon epitaxial planar type fast recovery diode designed for general rectification applications. It features a cathode common dual type construction, which allows for efficient performance in various circuits. The diode has a low forward voltage drop, typically between 0.87V and 0.93V, and exhibits low switching loss, making it suitable for high-frequency applications. The absolute maximum ratings include a repetitive peak reverse voltage of 200V and an operating junction temperature range from -55¬8C to +150¬8C. The reverse recovery time is specified between 14ns and 25ns, which is advantageous for applications requiring rapid switching. Additionally, the thermal resistance from junction to case is rated at 6.0¬8C/W, indicating effective heat dissipation. Engineers considering the RF601BM2D for their projects should note its surge current capability of 60A and average rectified forward current rating, which supports robust performance in demanding environments. Overall, this diode is a reliable choice for applications requiring fast recovery and low loss characteristics.