Low IR, 65V, 20A, ITO-220AB, Schottky Barrier Diode
RBQ20T65ANZ
The RBQ20T65ANZ is a low reverse current Schottky barrier diode designed for general rectification applications. It features a maximum reverse voltage of 65V and a forward current rating of 20A, making it suitable for high-efficiency power supply circuits. The diode has a low forward voltage drop, with typical values ranging from 0.61V to 0.69V at a junction temperature of 25¬8C. It also exhibits low reverse leakage current, with values between 20OºA and 80OºA at 25¬8C. The device is housed in a TO-220AB package, which facilitates effective thermal management with a thermal resistance of 2¬8C/W from junction to case. The operating junction temperature ranges from -55¬8C to +150¬8C, ensuring reliability in various environmental conditions. This diode is particularly well-suited for applications requiring high reliability and efficiency.
Low IR, 65V, 20A, ITO-220AB, Schottky Barrier Diode
RBQ20T65ANZRBQ20T65ANZ is low IR schottky barrier diode for general rectification.
RBQ20T65ANZ is low IR schottky barrier diode for general rectification.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Schottky Diodes | Schottky Diodes |
| Product Number | RBQ20T65ANZ | RBQ20T65ANZ |
| Product Name | Low IR, 65V, 20A, ITO-220AB, Schottky Barrier Diode |
Schottky Barrier Diode |
| Package | TO-220; TO-220FN3_Diode | TO-220; TO-220AB |
| RoHS Compliant | RoHS | RoHS |
| VF | 0.6900 volts | 0.7000 volts |
