ROHM Semiconductor GmbH Trench MOS Structure, 100V, 2A, SOD-123FL, Highly Efficient SBD for Automotive RBLQ2MM10TF

Description
The RBLQ2MM10TF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Datasheet
Description
The RBLQ2MM10TF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Datasheet

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Trench MOS Structure, 100V, 2A, SOD-123FL, Highly Efficient SBD for Automotive - RBLQ2MM10TF - ROHM Semiconductor GmbH
Willich, Germany
Trench MOS Structure, 100V, 2A, SOD-123FL, Highly Efficient SBD for Automotive
RBLQ2MM10TF
Trench MOS Structure, 100V, 2A, SOD-123FL, Highly Efficient SBD for Automotive RBLQ2MM10TF
The RBLQ2MM10TF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

The RBLQ2MM10TF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Diodes
Product Number RBLQ2MM10TF
Product Name Trench MOS Structure, 100V, 2A, SOD-123FL, Highly Efficient SBD for Automotive
RoHS Compliant RoHS
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