ROHM Semiconductor USA, LLC Nch 800V 1A Power MOSFET R8002CND

R8002CND is an N-channel power MOSFET with a maximum drain-source voltage (V_DSS) of 800V and a continuous drain current (I_D) rating of ¬±2A. It features a low on-resistance of 4.3Oc, which contributes to efficient power management in applications such as switching power supplies. The device supports a power dissipation of up to 69W and operates within a junction temperature range of -55¬8C to +150¬8C. It is designed for fast switching speeds, simplifying drive circuit requirements and facilitating parallel usage. The MOSFET is RoHS compliant and features Pb-free plating, making it suitable for environmentally conscious designs. The product is packaged in a TO-252 form factor, with a recommended storage and operating environment to ensure reliability.