ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6520ENZC8

N-channel 650V 20A power MOSFET in TO-3PF package with a maximum drain-source on-state resistance of 0.205Ω at 25°C, dissipating up to 68W, and compliant with RoHS. It features a junction temperature range of -55°C to +150°C, single-pulse avalanche energy of 444mJ, and thermal resistance from junction to case of 1.04°C/W.