ROHM Semiconductor GmbH 600V 10A TO-220FM, PrestoMOS™ with integrated high-speed diode R6018VNX

R6018VNX is an N-channel 600V power MOSFET in a TO-220FM package, designed for switching applications. It has a continuous drain current of 10A and a pulsed drain current of 54A, with a maximum on-resistance of 0.204Ω at 25°C. The device supports a gate-source voltage of ±30V and has a junction temperature range of -55°C to +150°C. Thermal resistance from junction to case is 2.02°C/W and junction to ambient is 62.5°C/W. The MOSFET features fast switching speed and integrated fast-recovery body diode with reverse recovery time of 68ns and charge of 240nC. It is RoHS compliant and uses a halogen-free mold compound.