QS8J4HZG is a dual P-channel MOSFET in a TSMT8 package for switching applications, rated for -30V drain-source voltage and ±4A continuous drain current, with a maximum on-resistance of 56mΩ at -10V gate-source voltage and 4A drain current. It includes built-in gate-source protection diodes, is RoHS compliant, and is AEC-Q101 qualified. The package measures 2.9mm × 2.9mm, with a power dissipation rating of 1.5W. Thermal resistance is 83.3°C/W on a ceramic board and 113°C/W on FR4. Junction temperature ranges from -55°C to 150°C.
QS8J4HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | QS8J4HZG |
| Product Name | -30V Pch+Pch Small Signal MOSFET |
| Polarity | P-Channel |
