The QS6Z5 is a dual transistor device integrating an NPN and a PNP transistor in a SOT-457T package, designed for low-frequency amplification and high-speed switching applications. Each transistor has a collector-emitter voltage rating of 50 V and a continuous collector current of 1 A. The device features a low collector-emitter saturation voltage of 350 mV (NPN) and -400 mV (PNP) at specified currents, with a DC current gain range of 180 to 450. The junction temperature ranges from -55 °C to 150 °C, and total power dissipation is 1.25 W when mounted on a 25 mm × 25 mm × 0.8 mm ceramic board. The packaging is supplied in a 3000-piece reeled tape format with 8 mm tape width. Transition frequency is 360 MHz for the NPN and 400 MHz for the PNP transistor.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | QS6Z5 | QS6Z5 |
| Product Name | NPN+PNP, SOT-457T, Driver Transistor | NPN+PNP Driver Transistor |
| Polarity | NPN; PNP | NPN; PNP |
