The QS6K21 is a 45V N-channel plus N-channel small signal MOSFET in a TSMT6 surface-mount package, designed for switching applications. It has a continuous drain current of ±1.0A, a maximum on-resistance of 420mΩ at V_GS=4.5V and I_D=1.0A, and a power dissipation of 1.25W. The device includes built-in gate-source protection diodes, is RoHS compliant, and operates within a junction temperature range of -55°C to +150°C. Thermal resistance is 100°C/W when mounted on a ceramic board and 132°C/W on FR4.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6K21 |
| Product Name | 45V Nch+Nch Small Signal MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 45 volts |
| IDSS | 1000 milliamps |
| PD | 1250 milliwatts |
