The QS6J1 is a -20V P-channel dual MOSFET in a TSMT6 surface-mount package, designed for switching applications. It has a continuous drain current of ±1.5A, a maximum power dissipation of 1.25W, and a maximum on-resistance of 215mΩ at -4.5V gate-source voltage. The device includes a built-in gate-source protection diode and is RoHS compliant. It operates within a junction temperature range of -55°C to +150°C and meets AEC-Q200 and UL 94 V-0 standards. The package dimensions and thermal resistance values are specified for mounting on ceramic and FR4 boards.
-20V Pch+Pch Small Signal MOSFET
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6J1 |
| Product Name | -20V Pch+Pch Small Signal MOSFET |
| Polarity | P-Channel |
| V(BR)DSS | -20 volts |
| IDSS | -1500 milliamps |
| PD | 1250 milliwatts |
