The QS5Y2 is a dual transistor device integrating a -50V, -3A PNP and a 50V, 3A NPN bipolar transistor in a SOT-25T package, designed for low-frequency amplification and high-speed switching applications. The PNP transistor exhibits a collector-emitter saturation voltage of -400 mV maximum at -1 A collector current and -50 mA base current, while the NPN transistor has a saturation voltage of 350 mV maximum at 1 A and 50 mA. Both transistors feature a DC current gain ranging from 180 to 450 at 50 mA collector current, transition frequencies of 300 MHz and 320 MHz respectively, and operating junction temperatures up to 150°C. The device meets RoHS standards and is supplied in a 2928 taping reel format with 3000 units per reel.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | QS5Y2 | QS5Y2 |
| Product Name | NPN+PNP, SOT-25T, Driver Transistor | PNP+NPN Driver Transistor |
| Polarity | NPN; PNP | NPN; PNP |
