The QS5Y1 is a paired NPN and PNP silicon epitaxial planar transistor in a TSMT5 package, designed for low-frequency amplification and driver applications. Each transistor has a collector-emitter voltage rating of ±30 V and a continuous collector current of ±3 A, with a power dissipation of 0.9 W per element when mounted on a 25 × 25 × 0.8 mm ceramic board. The devices feature low saturation voltage, typically ≤400 mV at ±1 A collector current, and a transition frequency of up to 300 MHz for the NPN and 270 MHz for the PNP. The package dimensions and internal circuit layout are specified for surface-mount application, with a storage temperature range of -55 °C to 150 °C and a maximum junction temperature of 150 °C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | QS5Y1 | QS5Y1 |
| Product Name | NPN+PNP, SOT-25T, Driver Transistor | PNP+NPN Driver Transistor |
| Polarity | NPN; PNP | NPN; PNP |
