MH2208WZ is a 1200V, 150A fast recovery diode bare die designed for free-wheeling applications in industrial IGBT modules. The die measures 6.00mm by 11.00mm and is fabricated on a 150mm wafer with a thickness of 0.12±0.01mm. It has a typic<n al forward voltage of 1.65V at 150A and 25°C, with a maximum repetitive peak reverse voltage of 1200V and an operating junction temperature range of -40°C to +175°C. The device features a light punch-through structure, low forward voltage, and soft recovery characteristics. The chip uses AlSiCu top-side metallization and Ti/Ni/Au back-side metallization with polyimide passivation. Technology qualification is confirmed for the TO-247N package, but electrical characteristics such as switching and thermal performance are dependent on module design and mounting and therefore not specified for the bare die.
Application: Free Wheeling
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| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MH2208WZ |
| Product Name | 1200V 150A, FRD Bare Die for IGBT Module |
| TJ | -40 to 175 C (-40 to 347 F) |
