The MH2207WZ is a 1200V, 100A fast recovery diode bare die designed for free-wheeling applications in industrial systems. It features a light punch-through structure with a typical forward voltage of 1.65V at 100A and 25°C, and a repetitive peak reverse voltage of 1200V. The die operates with a junction temperature range of -40°C to +175°C and has a reverse current of up to 10μA at 1200V. The chip measures 5.00mm × 9.00mm and is fabricated on a 150mm wafer with polyimide passivation. The part is technology qualified in a TO-247N package but is supplied as a bare die.
Application: Free Wheeling
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MH2207WZ |
| Product Name | 1200V 100A, FRD Bare Die for IGBT Module |
| TJ | -40 to 175 C (-40 to 347 F) |
