The MH2206WZ is a 1200V, 75A fast recovery diode bare die designed for free-wheeling applications in industrial IGBT modules. It features a light punch-through structure, low forward voltage (typical 1.65V at 75A and 25°C), and very fast, soft recovery characteristics. The die has a chip size of 4.30mm × 8.20mm and is fabricated on a 150mm wafer with a thickness of 0.12±0.01mm. The anode is top-side metallized with AlSiCu (5.0μm) and the cathode is back-side metallized with Ti/Ni/Au. The operating junction temperature ranges from -40°C to +175°C. The device is technology qualified in TO-247N package, though the bare die itself does not have specified switching or thermal parameters due to dependency on module design and mounting.
Application: Free Wheeling
For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | MH2206WZ |
| Product Name | 1200V 75A, FRD Bare Die for IGBT Module |
| TJ | -40 to 175 C (-40 to 347 F) |
